Average Temperature Determination of AlGaN/GaN HEMT Utilizing Pinch-Off Voltage Biasing
IEEE Transactions on Electron Devices（2023）
关键词
AlGaN,AlGaN,average temperature,average temperature,field effect transistor (FET),field effect transistor (FET),gallium nitride (GaN),gallium nitride (GaN),HEMT,HEMT,power dissipation,power dissipation,thermal model,thermal model
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