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Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (in,ga)n/gan Quantum Wells

R. M. Barrett, J. M. McMahon,R. Ahumada-Lazo,J. A. Alanis,P. Parkinson,S. Schulz,M. J. Kappers,R. A. Oliver,D. Binks

ACS PHOTONICS（2023）

Cited 8|Views24
Key words
InGaN,efficiency droop,Auger recombination,localization,point defect density,light-emittingdiode
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