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Efficacy of Spatial and Temporal RHBD Techniques at Advanced Bulk FinFET Technology Nodes

IEEE TRANSACTIONS ON NUCLEAR SCIENCE(2023)

Cited 4|Views10
Key words
Single event upsets,Transistors,Delays,FinFETs,Alpha particles,Threshold voltage,Latches,Alpha particles,collected charge,critical charge,feedback loop delay,FinFET,heavy ions,radiation-hardened-by-design (RHBD),scaling,single-event transient (SET) pulse-width,single-event upset (SEU)
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