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Switching Performance of GaN $P$-Fet-bridge (PFB-) HEMTs Studied with Mixed-mode TCAD Simulation

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD)(2023)

Cited 2|Views42
Key words
p-GaN,HEMT,FET-bridge,threshold voltage,false turn-on,mixed-mode simulation
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