Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Light-Emitting Diodes with Lattice- Matched AlInGaN Insertion in N-Algan Layer
IEEE photonics journal（2023）
Key words
Light emitting diodes,Wide band gap semiconductors,Aluminum gallium nitride,Photonic band gap,Lattices,Charge carrier processes,Radiative recombination,AlInGaN,lattice-matching,UV LEDs
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