2.6- and 4-W E-Band GaN Power Amplifiers with a Peak Efficiency of 22% and 15.3%
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS（2023）
关键词
E-band,gallium nitride (GaN),high efficiency,high frequency,high output power,low-loss,mm-wave,monolithic microwave integrated circuit (MMIC),ON-chip,power amplifier (PA),power combining,W-band
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