Modeling of Surface Damage at the Si/SiO_2-interface of Irradiated MOS-capacitors

N. Akchurin,G. Altopp,B. Burkle,W. D. Frey,U. Heintz,N. Hinton,M. Hoeferkamp,Y. Kazhykarim,V. Kuryatkov,T. Mengke,T. Peltola,S. Seidel,E. Spencer,M. Tripathi,J. Voelker

JOURNAL OF INSTRUMENTATION（2023）

引用 2|浏览11

关键词

Detector modelling and simulations II (electric fields, charge transport, multiplication and induction, pulse formation, electron emission, etc),Radiation-hard detectors,Si microstrip and pad detectors,Detector modelling and simulations I (interaction of radiation with matter, interaction of photons with matter, interaction of hadrons with matter, etc)

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