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Enhancement-mode Vertical (100) Β-Ga2o3 FinFETs with an Average Breakdown Strength of 2.7 MV Cm−1

Kornelius Tetzner,Michael Klupsch,Andreas Popp,Saud Bin Anooz,Ta-Shun Chou,Zbigniew Galazka,Karina Ickert,Mathias Matalla,Ralph-Stephan Unger,Eldad Bahat Treidel,Mihaela Wolf,Achim Trampert,Joachim Wuerfl,Oliver Hilt

JAPANESE JOURNAL OF APPLIED PHYSICS（2023）

Cited 8|Views21
Key words
gallium oxide,transistor,power electronics,FinFET
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