High Ion/Ioff Ratio 4H-Sic MISFETs with Stable Operation at 500 °C Using SiO2/SiNx/Al2O3 Gate Stacks
APPLIED PHYSICS LETTERS（2023）
Key words
Metal Gate Transistors,Double-Gate Transistors,High-Temperature Electronics,High-k Dielectrics,Tunnel Field-Effect Transistors
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