Comparative Study on Characteristics of GaN-based MIS-HEMTs with Al2O3 and Si3N4 Gate Insulators under Hot Carrier Degradation
2023 35th International Conference on Microelectronic Test Structure (ICMTS)（2023）
Key words
power devices,metal-insulator-semiconductorhigh electron mobility transistors (MIS-HEMTs),impact ionization,Al2O3/Si3N4 insulator MIS-HEMTs.
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