Monolithically Stacked Two Layers of A-Igzo-based Transistors Upon A-Igzo-based Analog/Logic Circuits
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
关键词
Transistors,Logic gates,Microelectronics,Voltage,Silicon,Dielectrics,Stress,Amorphous indium-gallium-zinc oxide (a-IGZO) transistor,amplifier,back-end-of-line (BEOL) compatible,monolithic 3-D integrated circuits,ring oscillator (RO)
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