Improvement of Si3N4/SiO2 Etching Selectivity Through the Passivation of SiO2 Surface in Aromatic Carboxylic Acid-Added H3PO4 Solutions for the 3D NAND Integration
APPLIED SURFACE SCIENCE（2023）
关键词
Aromatic carboxylic acid,Surface passivation,Oxygen vacancy,Silicon dioxide,Silicon nitride,3D NAND
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