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Effects of Different Factors on Single Event Effects Introduced by Heavy Ions in SiGe Heterojunction Bipolar Transistor: A TCAD Simulation

Zheng Zhang,Gang Guo, Futang Li,Haohan Sun,Qiming Chen,Shuyong Zhao,Jiancheng Liu,Xiaoping Ouyang

ELECTRONICS（2023）

Cited 3|Views2
Key words
SiGe heterojunction bipolar transistor,single event effect,single event transient,charge collection,TCAD simulation
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