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Testing Silicon Photonic Mach–Zehnder Modulators Versus Total Ionizing Dose

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT(2024)

Ist Nazl Fis Nucl

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Abstract
Silicon photonics is emerging as a key technology for developing radiation-tolerant optical transceivers. In this work, we present the electro-optical characterization of two radiation-hardened shallow-etched Mach–Zehnder modulators with different doping configurations when exposed to 1.2 Grad(SiO2) total ionizing dose. The trade-offs between radiation hardness and nominal performance metrics are highlighted to provide insights for optimizing SiPh devices for high-energy physics applications.
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Silicon photonics,Mach-zehnder modulator,PN junction,Phase shifter,Radiation hardness,Ionizing radiation,X-rays,High-energy physics,Data transmission
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要点】:本研究对两种不同掺杂配置的辐射硬化浅蚀马赫-曾德尔调制器在1.2 Grad(SiO2)总电离剂量下的电光特性进行了表征,探讨了辐射硬度和性能指标之间的权衡,以优化硅光子器件在高能物理应用中的性能。

方法】:通过电光特性测试分析了两种不同掺杂配置的马赫-曾德尔调制器在辐射影响下的性能变化。

实验】:在1.2 Grad(SiO2)的总电离剂量下对调制器进行测试,具体数据集名称未在摘要中提及,但实验结果用于比较两种调制器的辐射硬度和性能。