An Analytical Characterization for IMODFETs
SEMICONDUCTING AND INSULATING MATERIALS, 1996 PROCEEDINGS OF THE 9TH CONFERENCE ON SEMICONDUCTING AND INSULATING MATERIALS (SIMC'96)（1996）
Key words
III-V semiconductors,Schrodinger equation,aluminium compounds,gallium arsenide,high electron mobility transistors,semiconductor device models,Poisson's equations,Schroedinger equation,drain resistance,gate-source capacitance,inverted MODFET,self-consistent solution,small-signal parameters,transconductance,unity current gain cut-off frequency
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