Highly Linear and Symmetric Analog Neuromorphic Synapse Based on Metal Oxide Semiconductor Transistors with Self‐Assembled Monolayer for High‐Precision Neural Network Computation (adv. Electron. Mater. 3/2023)
ADVANCED ELECTRONIC MATERIALS（2023）
Key words
artificial intelligence,computing-in-memory,indium gallium zinc oxide transistor,neuromorphic device,self-assembled monolayer
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