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Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications

Christopher Safranski,Guohan Hu,Jonathan Z. Sun,Pouya Hashemi,Stephen L. Brown,Luxherta Buzi,Christopher P. D'Emic,Eric R. J. Edwards,Eileen Galligan,Matthias G. Gottwald,Oki Gunawan,Saba Karimeddiny, Hyunsung Jung,Juhyun Kim,Ken Latzko,Philip L. Trouilloud,Daniel C. Worledge

IEEE Transactions on Electron Devices（2022）

引用 12|浏览50
关键词
Magnetic memory,magnetic tunnel junctions (MTJs),magnetics,spintronics
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