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Manipulation of Etch Selectivity of Silicon Nitride over Silicon Dioxide to A-Carbon by Controlling Substate Temperature with a CF4/H2 Plasma

Shih-Nan Hsiao,Nikolay Britun,Thi-Thuy-Nga Nguyen,Takayoshi Tsutsumi,Kenji Ishikawa,Makoto Sekine,Masaru Hori

VACUUM（2023）

Cited 11|Views18
Key words
PECVD SiN film,PECVDSiO2 film,CF4,H2 plasma,Low temperature etching,3D NAND
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