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Demonstration of High Endurance Capability on Mega-Bit RRAM Macro and Model of Ppm Level Failures

Chang-Feng Yang,Chun-Yu Wu,Meng-Chun Shih, Ming-Ta Yang,Ming-Han Yang, Yu-Tien Wu, Ta-Chun Chien, Chih-Wei Lai,Shih-Chi Tsai,Wen-Ting Chu,Arthur Hung

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）

Cited 2|Views7
Key words
endurance,RRAM,random telegraph noise
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