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Interplay Between Charge Trapping and Polarization Switching in MFDM Stacks Evidenced by Frequency-Dependent Measurements

Justine Barbot,Jean Coignus,Nicolas Vaxelaire,Catherine Carabasse,Olivier Glorieux,Messaoud Bedjaoui,Francois Aussenac,Francois Andrieu,Francois Triozon,Laurent Grenouillet

ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)（2022）

Cited 2|Views26
Key words
Alumina,ferroelectric devices,hafnium oxide,memory,switching frequency,trapping,tunnel junction
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