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A New Layout Method for Junction Field Effect Transistors (jfets) on 4H-Sic That Provides a Significant Reduction in On-Resistance

2022 IEEE 9th Workshop on Wide Bandgap Power Devices &amp Applications (WiPDA)(2022)

Cited 0|Views14
Key words
4H-SiC,JFET,Surface-Buried Gate JFET,Lateral-Vertical JFET
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