2D $\rm\bf {Be_{3}B_{2}C_{3}}$:a stable direct-bandgap semiconductor with record-breaking carrier mobility, $\rm\bf 8.1 \times 10^{5} cm^{2}V^{-1}s^{-1}$
arXiv (Cornell University)（2022）
Key words
semiconductor,carrier mobility,2d,direct-bandgap,record-breaking
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