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Improvement in Instability of Transparent ALD ZnO TFTs under Negative Bias Illumination Stress with SiO/AlO Bilayer Dielectric

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY(2022)

Cited 6|Views11
Key words
Zinc Oxide,thin-film transistor,negative bias illumination stress (NBIS),stability,holes-blocking layer (HBL)
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