Numerical Simulation on the Dependence of Photoresponse on the Thickness of the Charge Layer for GaN SAM Avalanche Photodiodes
2022 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)（2022）
Key words
response current,back-illuminated gallium nitride-based detector,ideal charge layer thickness,device response,readout circuit,solar-blind ultraviolet detections,SAM avalanche photodiodes,numerical simulation,GaN
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