Characterization of CdTe-based p-n junction- diode X/-ray detectors formed by frontside laser irradiation
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXIV（2022）
Key words
CdTe crystals, frontside laser-induced doping, p-n junction diode, I-V characteristic, X/gamma-ray detector, charge transport, isotope spectrum, energy resolution
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