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Highly Selective Isotropic Chemical Dry Etching for Gate-All-around Devices: Nanosheet, Forksheet and Complementary FETs

Yusuke Muraki,Yusuke Oniki,Pallavi P. Gowda,Efrain Altamirano-Sánchez,Hans Mertens,Naoto Horiguchi,Frank Holsteyns,Subhadeep Kal,Cheryl Alix,Kaushik Kumar,Aelan Mosden, Trace Hurd, Nobuyuki Takahashi

Advanced Etch Technology and Process Integration for Nanopatterning XI（2022）

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