Breakdown Mechanism of AlGaN/GaN HEMT on 200-Mm Silicon Substrate with Silicon Implant-Assisted Contacts

Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu,Matthew Charles,Marianne Coig,Jerome Biscarrat,Francois Aussenac,Nicolas Defrance,Christophe Gaquiere,Fred Gaillard,Erwan Morvan

IEEE TRANSACTIONS ON ELECTRON DEVICES（2022）

引用 7|浏览13

关键词

200 mm,breakdown voltage (BV),gallium nitride (GaN)/Si,high electron mobility transistor (HEMT),ohmic contact,radio frequency (RF),short channel effects (SCEs),silicon implantation

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