Channel Design Optimization for 1.2-Kv 4H-Sic MOSFET Achieving Inherent Unipolar Diode 3rd Quadrant Operation
IEEE Journal of the Electron Devices Society（2022）
关键词
MOSFET,Doping,Electric potential,Logic gates,JFETs,Schottky diodes,Implants,SiC,MOSFETs,channel length,channel diode,channel doping,gate oxide,third quadrant,channel potential
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