Analysis of Abnormal Current Rise Mechanism in GaN-MIS HEMT with Al2O3/Si3N4 Gate Insulator under Hot Switching
IEEE TRANSACTIONS ON ELECTRON DEVICES（2022）
关键词
Al2O3/Si3N4 insulator metal-insulator-semiconductor high electron mobility transistors (MISHEMTs),impact ionization (II),kink effect,MIS HEMTs
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