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Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study.

Arabinda Barman,Dip Das,Sujit Deshmukh,Pranab Kumar Sarkar,Debosmita Banerjee,Rene Huebner,Mukul Gupta,Chetan Prakash Saini,Shammi Kumar,Priya Johari,Sankar Dhar,Aloke Kanjilal

ACS Applied Materials & Interfaces（2022）

Cited 1|Views35
Key words
resistive memory,vacancy engineering,ultralow-voltage switching,conducting filaments,first-principles calculations
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