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Heteroepitaxy of Hf0.5Zr0.5O2 Ferroelectric Gate Layer on AlGaN/GaN Towards Normally-off HEMTs

Guanjie Li,Xiaomin Li,Xinke Liu,Anran Gao,Junliang Zhao,Fawang Yan,Qiuxiang Zhu

APPLIED SURFACE SCIENCE（2022）

Cited 4|Views26
Key words
Normally-off HEMTs,AlGaN,GaN,Hf0,5Zr0,Ferroelectric gate
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