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Sub-nT Resolution of Single Layer Sensor Based on the AMR Effect in La2/3Sr1/3MnO3 Thin Films

IEEE Transactions on Magnetics(2021)

引用 8|浏览50
关键词
Anisotropic magnetoresistance (AMR),functional oxide,La2/3Sr1/3MnO3 thin film,magnetic sensor,planar Hall effect bridge (PHEB) sensor,uniaxial anisotropy
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