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2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction

G. Hu,G. Lauer,J. Z. Sun,P. Hashemi,C. Safranski,S. L. Brown,L. Buzi,E. R. J. Edwards,C. P. D'Emic,E. Galligan,M. G. Gottwald,O. Gunawan, H. Jung,J. Kim,K. Latzko,J. J. Nowak,P. L. Trouilloud, S. Zare,D. C. Worledge

International Electron Devices Meeting（2021）

Cited 24|Views26
Key words
Integrated circuits,Resistance,Torque,Magnetoresistive devices,Random access memory,Switches,Writing
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