Strain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility Transistor
2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184)（2020）
Key words
GaN,HEMT,Breakdown voltage,Power Device,Piezo-electric
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined