Comparison of Total Ionizing Dose Effects in SOI FinFETs Between Room and High Temperature

Xu Zhang,Fanyu Liu,Bo Li,Can Yang,Yang Huang,Peng Lu,Siyuan Chen,Jinxing Cheng,Qingbo Wang,Ai Yu,Tiexin Zhang,Zhongshan Zheng,Qingzhu Zhang,Huaxiang Yin,Jiajun Luo

IEEE Transactions on Nuclear Science（2021）

引用 9|浏览1

关键词

Radiation effects,FinFETs,Logic gates,Threshold voltage,Temperature,Silicon-on-insulator,Degradation,High temperature,silicon on insulator (SOI) FinFET (FF),synergetic effects,threshold voltage (V-TH),total ionizing dose (TID)

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