Current Collapse Degradation in GaN High Electron Mobility Transistor by Virtual GateD. Godfrey,D. Nirmal,L. Arivazhagan,D. Godwinraj,N. Mohan Kumar,Yulin Chen,Wenkuan YehMicroelectronics Journal（2021）引用 7|浏览6关键词Virtual gate,GaN,HEMT,Surface trapsAI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
