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Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques

Voitsekhovskii A. V.,Nesmelov S. N.,Dzyadukh S. M.,Varavin V. S., Rzhanov Institute of Semiconductor Physics SB RAS,Mikhailov N. N.,Sidorov G. Y.,Yakushev M. V.,Marin D. V.

Journal of Electronic Materials（2021）

Cited 0|Views6
Key words
Mercury cadmium telluride,molecular beam epitaxy,graded-gap layer,ion implantation,MIS structure,admittance
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