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Impact of Charge Trapping and Depolarization on Data Retention Using Simultaneous P–V and I–V in HfO₂-Based Ferroelectric FET

Y. Higashi,N. Ronchi,B. Kaczer,Md Nur K. Alam,B. J. O'Sullivan,K. Banerjee,S. R. C. McMitchell,L. Breuil,A. Walke,G. Van den Bosch,D. Linten,J. Van Houdt

IEEE TRANSACTIONS ON ELECTRON DEVICES（2021）

Cited 17|Views42
Key words
Charge trapping,data retention (DR),depolarization,ferroelectric (FE),FE-HfO2 based field-effect transistor (FEFET),hafnium oxide
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