Impact of the Strained Sige Source/Drain on Hot Carrier Reliability for 45 Nm P-Type Metal-Oxide-Semiconductor Field-Effect TransistorsC. Y. Cheng,Y. K. Fang,J. C. Hsieh,H. Hsia,W. M. Chen,S. S. Lin,C. S. HouAPPLIED PHYSICS LETTERS(2008)引用 10|浏览3AI 理解论文溯源树样例生成溯源树,研究论文发展脉络Chat Paper正在生成论文摘要