Investigation on the Amplitude of Random Telegraph Noise (rtn) in Nanoscale Mosfets -Scaling Limit of "hole in the Inversion Layer" Model
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)（2016）
Key words
the,HIL model,nanoscale devices,resistor network,ultrascaled devices,physical model fail,validation range,scaling limit,hole in the inversion layer model,nanoscale MOSFET,RTN amplitude,random telegraph noise
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