订阅小程序
旧版功能

Investigation of the Differential Resistance of MIS Structures Based on N-Hg0.78cd0.22te with Near-Surface Graded-Gap Layers

Voitsekhovskii A. V.,Kulchitskii N. A.,Nesmelov S. N.,Dzyadukh S. M.,Varavin V. S., Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Science,Mikhailov N. N.,Yakushev M. V.,Sidorov G. Yu.

Journal of Communications Technology and Electronics（2021）

引用 0|浏览15
关键词
MIS structures,HgCdTe,molecular-beam epitaxy,differential resistance,graded-gap layer
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要