Quasi-static I-V Characterization Utilized for Isothermal and Thermal Parameters Comparison in InAlN/GaN or AlGaN/GaN HEMTs
2020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM)（2020）
关键词
Temperature,HEMTs,Thermal conductivity,Wide band gap semiconductors,Isothermal processes,MODFETs,Aluminum gallium nitride
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