All-operation-regime Characterization and Modeling of Drain Current Variability in Junctionless and Inversion-Mode FDSOI Transistors
2020 IEEE Symposium on VLSI Technology（2020）
关键词
Junctionless Accumulation Mode,inversion-mode FDSOI transistors,drain current variability,operation-regime characterization,Random Dopant Fluctuations variability,lower drain current local variability,all-operation-regimes,JL transistors,VT-variability studies,junctionless Fully-Depleted Silicon-On-Insulator,size 20.0 nm,voltage 1.0 V,size 18.0 nm
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