Trap-Induced Data-Retention-Time Degradation of DRAM and Improvement Using Dual Work-Function Metal Gate

Kyoung Yeon Kim,Kyung Kyu Min,Byung-Gook Park

IEEE ELECTRON DEVICE LETTERS（2021）

Cited 8|Views8

Key words

Logic gates,Random access memory,Metals,Leakage currents,Green&apos,s function methods,Energy states,Electric fields,Data retention time,DRAM,gate-induced drain leakage (GIDL) current,trap-assisted tunneling (TAT),TCAD simulation,Green&#8217,s function method

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