Investigation of Quantization Effects on RTS Due to Oxide Traps Induced by Channel Hot-Carrier-Stressing in Pmosfets
IEEE Transactions on Device and Materials Reliability（2020）
关键词
MOSFET,Scattering,Fluctuations,Semiconductor device measurement,Voltage measurement,Stress,Stress measurement,Channel hot carrier stress,stress-induced traps,random telegraph signals (RTSs),oxide traps,screened Coulomb scattering
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