Improved Scalability of High-K Gate Dielectrics by Using Hf-AluminatesTH Hou,J Gutt,C Lim,S Marcus,C Pomarede,E Shero, H de Warrd,C Werkhoven,M Gardner,RW Murto,HR HuffPHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS I（2003）引用 0|浏览6AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
