Photodiodes Based on P-on-n Junctions Formed in MBE-grown N-Type MCT Absorber Layers for the Spectral Region 8 to 11 Μm
Infrared Physics & Technology（2020）
Key words
Infrared (IR),Photodiode (PD),IR FPA detector,Mercury-cadmium-tellurium (MCT),Molecular-beam epitaxy (MBE),p-on-n junction,Noise-equivalent temperature difference (NETD)
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