Bias-Dependent Variation in FinFET SRAM

Randy W. Mann,Meixiong Zhao, O. Sung Kwon,Xi Cao,Sanjay Parihar,Muhammed Ahosan Ul Karim,Jack Higman,Joseph Versaggi,Rick Carter

IEEE Transactions on Very Large Scale Integration (VLSI) Systems（2020）

Cited 4|Views116

Key words

Random access memory,FinFETs,Hardware,Mathematical model,Voltage measurement,Logic gates,Drain-induced barrier lowering (DIBL),fin field effect transistor (FinFET),local layout effects (LLE),scaling,static noise margin (SNM),static random access memory (SRAM),statistics,variation,Vmin,write margin (WRM),yield

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