RF Performance of a Fully Integrated 3D Sequential Technology

X. Garros,J. Lugo-Alvarez,L. Brunet, R. Nait Youcef,P. Batude,C. Fenouillet-Beranger,M. Casse,B. Sklenard,P. Scheiblin,J. Lacord,K. Triantopoulos,F. Andrieu,G. Ghibaudo,F. Gaillard

International Electron Devices Meeting（2019）

引用 14|浏览118

关键词

electrical factors,low temperature PMOS,top tier transistors,top tier PMOS,fully integrated CMOS 3D sequential integration technology,bottom tier devices,low temperature process,RF FOM,gate resistance,RF Figure-Of-Merits,3DSI,RF performance,frequency 80.0 GHz,size 30.0 nm,voltage 1.0 V,frequency 102.0 GHz,frequency 170.0 GHz,temperature 630.0 degC,frequency 55.0 GHz

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