Design Principle for a P-Type Oxide Gate Layer on AlGaN/GaN Toward Normally-off HEMTs: Li-doped NiO As a ModelGuanjie Li,Xiaomin Li,Junliang Zhao,Fawang Yan,Qiuxiang Zhu,Xiangdong GaoJOURNAL OF MATERIALS CHEMISTRY C（2020）引用 15|浏览31AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
